0.05
2
0.2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak Single Double.
1 Single Double.
1 Single
Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg
Rating 30 30 300 225 200 150 1 0.75 150.
55 to +150
Unit V V mA
1.1.
0.1
0.4 ± 0.2
mA
1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1O
A °C °C 3 2
Internal Conne.
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Schottky Barrier Diodes (SBD)
MA4X726
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
2.9 − 0.05
2.8 − 0.3 0.65 ± 0.15
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
1.9 ± 0.2
0.95
• Two MA3X721s are contained in one package (two diodes in a different direction) • Allowing to rectify under (IF(AV) = 200 mA) condition • High reliability
+ 0.2
0.95
0.5
I Features
0.5 R 4 1
+ 0.1
3
0.4 − 0.05
2
0.2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak Single Double*1 Single Double*1 Single
Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg
Rating 30 30 300 225 200 150 1 0.75 150 −55 to +150
Unit V V mA
1.1 − 0.1
0.4 ± 0.
MA4X726 Datasheet
