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MA4X726 - Silicon epitaxial planar type

Datasheet Summary

Features

  • 0.5 R 4 1 + 0.1 3 0.4.
  • 0.05 2 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak Single Double.
  • 1 Single Double.
  • 1 Single Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 225 200 150 1 0.75 150.
  • 55 to +150 Unit V V mA 1.1.
  • 0.1 0.4 ± 0.2 mA 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1O A °C °C 3 2 Internal Conne.

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Datasheet Details

Part number MA4X726
Manufacturer Panasonic
File Size 46.89 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4X726 Datasheet
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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA4X726 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 1.9 ± 0.2 0.95 • Two MA3X721s are contained in one package (two diodes in a different direction) • Allowing to rectify under (IF(AV) = 200 mA) condition • High reliability + 0.2 0.95 0.5 I Features 0.5 R 4 1 + 0.1 3 0.4 − 0.05 2 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak Single Double*1 Single Double*1 Single Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 225 200 150 1 0.75 150 −55 to +150 Unit V V mA 1.1 − 0.1 0.4 ± 0.
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