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MA4X746 - Silicon epitaxial planar type

Datasheet Summary

Features

  • IF(AV) = 200 mA, and VR > 50 V is achieved.
  • Allowing automatic insertion with the emboss taping.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • High rectification efficiency caused by its low forward-risevoltage (VF) 2.8.
  • 0.3 0.65 ± 0.15 1.5.
  • 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9.
  • 0.05 0.95 4 1 + 0.2 0.95 0.5 2 + 0.1 3 0.4.
  • 0.05 0.2 1.1.
  • 0.1 +.

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Datasheet preview – MA4X746

Datasheet Details

Part number MA4X746
Manufacturer Panasonic
File Size 46.82 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4X746 Datasheet
Additional preview pages of the MA4X746 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA4X746 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • IF(AV) = 200 mA, and VR > 50 V is achieved • Allowing automatic insertion with the emboss taping • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rectification efficiency caused by its low forward-risevoltage (VF) 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9 − 0.05 0.95 4 1 + 0.2 0.95 0.5 2 + 0.1 3 0.4 − 0.05 0.2 1.1 − 0.1 + 0.
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