MA4X796 - Silicon epitaxial planar type

Panasonic

Key Features

Two MA3X787s in the same direction are contained in one package.
Allowing to rectify under (IF(AV) = 100 mA) condition.
Optimum for high-frequency rectification because of its short reverse recovery time (trr).
Low VF (forward rise voltage), with high rectification efficiency.
Reverse voltage VR (DC value) = 50 V guaranteed 2.8.
0.3 0.65 ± 0.15 1.5.
0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9.
0.05 0.95 4 1.

MA4X796 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA4X796
Manufacturer	Panasonic
File Size	49.83 KB
Description	Silicon epitaxial planar type
Datasheet	MA4X796 Datasheet

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Schottky Barrier Diodes (SBD) MA4X796 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3X787s in the same direction are contained in one package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9 − 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.