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MA4X796 - Silicon epitaxial planar type

Datasheet Summary

Features

  • Two MA3X787s in the same direction are contained in one package.
  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency.
  • Reverse voltage VR (DC value) = 50 V guaranteed 2.8.
  • 0.3 0.65 ± 0.15 1.5.
  • 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9.
  • 0.05 0.95 4 1.

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Datasheet Details

Part number MA4X796
Manufacturer Panasonic
File Size 49.83 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4X796 Datasheet
Additional preview pages of the MA4X796 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA4X796 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3X787s in the same direction are contained in one package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 0.5 R 1.9 ± 0.2 2.9 − 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.
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