MA4X862 - Silicon epitaxial planar type

Panasonic

Key Features

Two electrically isolated elements incorporated.
Small diode capacitance CD.
Low forward dynamic resistance rf.
Optimum for a band switching of a tuner 2.8.
0.3 0.65 ± 0.15 + 0.2 1.5.
0.05 + 0.25 0.65 ± 0.15 0.5 R 1.9 ± 0.2 0.95 4 0.5 1 2.9.
0.05 + 0.2 0.95 + 0.1 3 0.4.
0.05 2 0.2 1.1.
0.1 + 0.2 Parameter Reverse voltage (DC) Forward current (DC) Single Double Symbol VR IF Topr Tstg Rating 35 100.

MA4X862 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA4X862
Manufacturer	Panasonic
File Size	49.08 KB
Description	Silicon epitaxial planar type
Datasheet	MA4X862 Datasheet

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Band Switching Diodes MA4X862 Silicon epitaxial planar type Unit : mm For band switching I Features • Two electrically isolated elements incorporated • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of a tuner 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.5 R 1.9 ± 0.2 0.95 4 0.5 1 2.9 − 0.05 + 0.2 0.95 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.2 Parameter Reverse voltage (DC) Forward current (DC) Single Double Symbol VR IF Topr Tstg Rating 35 100 75 −25 to +85 −55 to +100 Unit V mA mA/Unit °C °C 0.4 ± 0.