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MA6X129 - Silicon epitaxial planar type Rectifier Diodes

Key Features

  • 5° MA6X129 IF  VF 1 000 100°C 25°C 100 1.6 1.4 Rectifier Diodes VF  Ta 100 Ta = 150°C 10 IR  V R Forward current IF (mA) Forward voltage VF (V) Ta = 150°C 10.
  • 20°C 1.2 1.0 IF = 200 mA 0.8 0.6 0.4 0.2 10 mA 3 mA Reverse current IR (nA) 100°C 1 1 0.1 25°C 0.01 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.
  • 40 0.001 0 40 80 120 160 200 0 40 80 120 160 200 240 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  Ta 100 VR = 200.

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Datasheet Details

Part number MA6X129
Manufacturer Panasonic
File Size 62.39 KB
Description Silicon epitaxial planar type Rectifier Diodes
Datasheet download datasheet MA6X129 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type For small power current rectification 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit : mm 0.16+0.10 –0.06 0.30+0.10 –0.05 0.50+0.10 –0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Single Triple Repetitive peak forward current Single Triple IFSM Tj Tstg IFRM Symbol VR VRM IO Rating 200 200 100 200 200 600 350 1 000 150 −55 to +150 °C °C mA mA Unit V V mA 10° 1.1+0.2 –0.1 1.1+0.3 –0.