Silicon Epitaxial Planar Type Rectifier Diodes
| Part number | MA6X129 |
|---|---|
| Manufacturer | Panasonic |
| File Size | 62.39 KB |
| Description | Silicon epitaxial planar type Rectifier Diodes |
| Datasheet | MA6X129_PanasonicSemiconductor.pdf |
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Anode 3 Mini6-G1 Package Marking Symbol: M4F Internal Connection 6 5 4 1 2 3 Single Non-repetitive peak forward surge current Triple Junction temperature Storage temperature Note) : t = l s I Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 200 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 0.2 1.2 Unit µA V pF Note) Rated input/output frequency:.
| Part Number | Description |
|---|---|
| MA6X121 | Silicon epitaxial planar type Switching Diodes |
| MA6X122 | Silicon epitaxial planar type Switching Diodes |
| MA6X123 | Silicon epitaxial planar type |
| MA6X124 | Silicon epitaxial planar type |
| MA6X125 | Silicon epitaxial planar type |
| MA6X126 | Silicon epitaxial planar type Switching Diodes |
| MA6X127 | Silicon epitaxial planar type Switching Diodes |
| MA6X128 | Silicon epitaxial planar type Switching Diodes |
| MA6X078 | Silicon epitaxial planar type |
| MA6X078 | Band Switching Diodes |
