MA6X129 - Silicon epitaxial planar type Rectifier Diodes
Panasonic
Key Features
5°
MA6X129
IF VF
1 000 100°C 25°C 100
1.6 1.4
Rectifier Diodes
VF Ta
100 Ta = 150°C 10
IR V R
Forward current IF (mA)
Forward voltage VF (V)
Ta = 150°C 10.
20°C
1.2 1.0 IF = 200 mA 0.8 0.6 0.4 0.2 10 mA 3 mA
Reverse current IR (nA)
100°C 1
1
0.1 25°C 0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.
40
0.001
0 40 80 120 160 200
0
40
80
120
160
200
240
Forward voltage VF (V)
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR Ta
100 VR = 200.
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Rectifier Diodes
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit : mm
0.16+0.10 –0.06
0.30+0.10 –0.05 0.50+0.10 –0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Output current Single Triple Repetitive peak forward current Single Triple IFSM Tj Tstg IFRM Symbol VR VRM IO Rating 200 200 100 200 200 600 350 1 000 150 −55 to +150 °C °C mA mA Unit V V mA
10°
1.1+0.2 –0.1 1.1+0.3 –0.