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MA729 - Schottky Barrier Diodes

Key Features

  • s.
  • Forward current (Average) IF(AV) = 200 mA rectification is possible.
  • High-density mounting is possible 5˚e 1.7±0.1/ 2.5±0.2 1.25±0.1 0.35±0.1 Unit: mm 0.7±0.1 1 0 to 0.1 2 0.5±0.1 5˚ 0.16+.
  • 00..016 stage. dc 0.4±0.1 lif0teoc0.y1cleaen (0.15) Plehtatsp:e/M/vaiiwsniwttefw. nolsalenocmwiie/cnpolDgdiina. ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd. ieltticnnaytnmocalp. eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg. efourDisMcaionnttie P.

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Datasheet Details

Part number MA729
Manufacturer Panasonic
File Size 218.64 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA729 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA2J729 (MA729) Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Forward current (Average) IF(AV) = 200 mA rectification is possible • High-density mounting is possible 5˚e 1.7±0.1/ 2.5±0.2 1.25±0.1 0.35±0.1 Unit: mm 0.7±0.1 1 0 to 0.1 2 0.5±0.1 5˚ 0.16+–00..016 stage.dc 0.4±0.1 lif0teoc0.y1cleaen (0.15) Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.