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MA750 - Schottky Barrier Diodes

Key Features

  • q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 -0.1 14.0±0.5 Solder Dip 4.0 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage MA750 MA750A Average forward current Non-repetitive peak forward surge current Junction temperatu.

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Datasheet Details

Part number MA750
Manufacturer Panasonic
File Size 28.47 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA750 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA111 MA750, MA750A Silicon epitaxial planer type (cathode common) For switching power supply s Features q Forward current (average) IF(AV) : 10A type q Sealed in TO-220F full-pack package, with high reliability q Cathode common dual type q Low forward voltage VF 16.7±0.3 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 -0.1 14.0±0.5 Solder Dip 4.0 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage MA750 MA750A Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * Sine half wave : 10ms/cycle Symbol VRRM IF(AV) IFSM* Tj Tstg Rating 40 45 10 120 – 40 to +125 – 40 to +125 Unit V A A ˚C ˚C 2.54±0.