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http://www.semi、con.panaso、nic.co.jp、。。13.5±0.3
MIP281
MOS
(IPD)
s
• MOS FET CMOS
• (85 VAC ∼ 274 VAC)
•(
)
•
s
• • AC •
etc. (
)
s Ta=25°C
VD 700
V
VB 7
V
VF 7
V
ID 220 mA
IDP 330 mA
Tch 150 °C
Tstg −55 ∼ +150
°C
s
1
15.4±0.3 2.8±0.2
1.5±0.2
10.5±0.3 9.5±0.2 8.0±0.2
Unit : mm
φ3.7±0.1
4.5±0.2 1.4±0.1
6.7±0.2
2.8±0.2
2.5±0.2
0.75±0.10
0.45±0.10
6.8±0.5
1.7±0.2
12345
1 : Bypass 4 : NC
2 : FB
5 : Drain
3 : Source
TO-220 Package
: MIP281
5
Max Duty Clock
2
SQ R
GND
3
1
http://www.semi、con.panaso、nic.co.jp、。。
MIP281
s
TC=25°C±2°C
(IPD)
fOSC MAXDC
IFB IHYS VFB VCC
IS
Ich
IFBO VUV
FB : Open FB : Open
IFB=−25 µA
VB=VCC+ 0.2 V, VFB=0 V VB=VCC+ 0.2 V, FB : Open VB=0 V VB=4.
MIP281 Datasheet
