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MIP3E30MP - Silicon MOSFET

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(IPD) MIP3E30MP MOS ■ • (MIP2ExD • • 50% ) 8 9.4±0.3 Unit : mm +0 0.25 -0.05 .10 7 5 7.62±0.25 3.4±0.3 3.8±0.25 6.3±0.2 ■ • 1 2 3 4 2.54±0.25 ■ VD VC ID IDP IC Tch Tstg 700 8 0.88 1.7 0.1 150 −55 ∼ +150 V V A A A °C °C 0.5±0.1 1.2±0.25 (2,3,7PIN) 1 : Source 2 : Source 3 : Source (1,4,5,8PIN) 4 : Control 5 : Drain 7 : Source 8 : Source DIP8-A1(CF) Package 0.4±0.1 0.6±0.1 : MIP3E3 ■ 0.6+0.25 -0.01 Control Drain S R Q Q Max. duty clock MOSFET S R Q Q Source 3˚ to 15˚ : 2003 8 SLB00055AJD 1 MIP3E30MP ■ TC = 25°C ± 3°C fOSC MAXDC PWM * VC = VC(CNT) − 0.2 V, VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VC = VC(CNT) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V 90 45.0 100 47.5 11 110 50.
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