Highly effective and low noise at a regular load are achieved. Power
consumption at a light load is reduced. Transformer sound measures are unnecessary.
Reduces circuit power consumption by supplying IPD inner circuit current
from input terminal of auxiliary winding voltage (VCC).
Detects over voltage protection when auxiliary winding voltage exceeds
setting value, which stops oscillation at latch mode.
Built-in timer latching function and over heating pr.
Full PDF Text Transcription for MIP4170MD (Reference)
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Intelligent Power Devices (IPDs) MIP4170MD Silicon MOS FET type integrated circuit Features Highly effective and low noise at a regular load are achieved. Power consu...
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ly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary. Reduces circuit power consumption by supplying IPD inner circuit current from input terminal of auxiliary winding voltage (VCC) Detects over voltage protection when auxiliary winding voltage exceeds setting value, which stops oscillation at latch mode. Built-in timer latching function and over heating protective function under over load. Applications For artificial resonance power source Absolute Maximum Ratings Ta = 25°C±3°C Parameter Symbol Rating Unit DRAIN volta
MIP4170MD Datasheet
