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Intelligent Power Devices (IPDs)
MIP4170MD
Silicon MOS FET type integrated circuit
Features Highly effective and low noise at a regular load are achieved. Power
consumption at a light load is reduced. Transformer sound measures are unnecessary. Reduces circuit power consumption by supplying IPD inner circuit current
from input terminal of auxiliary winding voltage (VCC) Detects over voltage protection when auxiliary winding voltage exceeds
setting value, which stops oscillation at latch mode. Built-in timer latching function and over heating protective function under
over load.
Applications For artificial resonance power source
Absolute Maximum Ratings Ta = 25°C±3°C
Parameter
Symbol Rating
Unit
DRAIN voltage
VD - 0.3 to +700 V
VCC voltage
VCC - 0.
MIP4170MD Datasheet
