Panasonic ON1109
ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.| Part No. | ON1109 |
|---|---|
| Datasheet | ON1109 Download |
| Manufacturer |  Panasonic |
| Description | Photo Interrupter |
| Buy | Stock & Price |
FEATURES
Highly precise position detection : 0.7 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature Deep and wide gap between emitting and detecting elements 7.0±0.2 3 2-ø3.2±0.2 2 3 1 4 (Note) ( ) Dimension is referenceABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 mW ˚C ˚C Topr –25 to +85 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C.ELECTRICAL CHARACTERISTICS
(Ta = 25˚C) Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Collector cutoff current Symbol VF IR ICEO CC...