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SK840303 - Silicon N-channel MOS FET

Key Features

  • Low drain-source ON resistance:RDS(on) typ. = 6 mW (VGS = 4.5 V).
  • Small package with back side heat sink for improved heat dissipation.
  • Eco-friendly Halogen-free package.
  • Packaging SK8403030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 33 V Gate-source surrender voltage VGSS ±20 V Drain current Peak drain current.

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Datasheet Details

Part number SK840303
Manufacturer Panasonic
File Size 551.58 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet SK840303 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). SK840303 Silicon N-channel MOS FET For DC-DC converter circuits  Overview SK840303 is the N-channel MOS FET that is highly suitable for DC-DC converter and other switching circuits.   Features  Low drain-source ON resistance:RDS(on) typ. = 6 mW (VGS = 4.5 V)  Small package with back side heat sink for improved heat dissipation.