SK8603170L
SK8603170L is Silicon N-channel MOSFET manufactured by Panasonic.
Features
- Low Drain-source On-state Resistance : RDS(on)typ = 3.9 m (VGS = 4.5 V)
- Halogen-free / Ro HS pliant
(EU Ro HS / UL-94 V-0 / MSL : Level 1 pliant)
5.9 6.15
Product Standards
MOS FET
5.1 4.9
Unit : mm 0.22
- Marking Symbol :17
- Packaging Embossed type (Thermo-pression sealing) : 3 000 pcs / reel (standard)
- Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Drain to Source Voltage
Gate to Source Voltage
Ta = 25 C, t = 10 s
- 1
Drain Current
Ta = 25 C, DC
- 1 Tc = 25 C
Total Power Dissipation
Pulsed, Tch < 150 C
- 2 Ta = 25 C, DC
- 1 Tc = 25 C
VDS VGS
20 28 20 59 84 2.8 24
Thermal Resistance
Channel to Ambient Rth(ch-a) Channel to Case Rth(ch-c)
44 5.1
C / W
Channel Temperature
Tch 150
Operating ambient temperature
Topr -40 to +85...
