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SK8603170L - Silicon N-channel MOSFET

Key Features

  • s.
  • Low Drain-source On-state Resistance : RDS(on)typ = 3.9 m  (VGS = 4.5 V).
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 5.9 6.15 Product Standards MOS FET SK8603170L 5.1 4.9 8765 Unit : mm 0.22.
  • Marking Symbol :17.
  • Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain to Source Voltage Gate to Source Voltage Ta = 25 C, t =.

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Full PDF Text Transcription (Reference)

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DReovcisNioon. . T2 T4-EA-14480 SK8603170L Silicon N-channel MOS FET For Load-switching / For DC-DC Converter  Features  Low Drain-source On-state Resistance : RDS(on)typ = 3.9 m  (VGS = 4.5 V)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 5.9 6.15 Product Standards MOS FET SK8603170L 5.1 4.9 8765 Unit : mm 0.22  Marking Symbol :17  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain to Source Voltage Gate to Source Voltage Ta = 25 C, t = 10 s *1 Drain Current Ta = 25 C, DC *1 Tc = 25 C Total Power Dissipation Pulsed, Tch < 150 C *2 Ta = 25 C, DC *1 Tc = 25 C VDS VGS ID PD 30 20 28 20 59 84 2.