Panasonic XN1872
Silicon N-channel . Enhancement MOS FET
| Part No. | XN1872 |
|---|---|
| Datasheet | XN1872 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-channel . Enhancement MOS FET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Parameter Drain to source voltage Rating Gate to source voltage of element Drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSO ID IDM PT Tch Tstg (Ta=25˚C) Ratings 50 8 100 200 300 150 –55 to +150 Unit V V mA mA mW ˚C ˚C 1 : Drain (Tr1) 2 : Drain (Tr2) 3 : Gate (Tr2) 0 to 0.1 0.1 to 0.3 4 : Source 5 : Gate (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 5U Internal Connection 5 4 3 2 FET 1 1 FET 2 sELECTRICAL CHARACTERISTICS
Parameter Drain to source voltage Drain current Gate cutoff current Gate threshold voltage Drain resistance Forward transfer admittance Output voltage high level Output voltage low level Input resistance Turn-on time Turn-off time Common source short-circuit input capacitance *1 *2 (Ta=25˚C) Symbol VDSS IDSS IGSS Vth RDS(on) | Yfs | VOH VOL R1+R2*1 ton*2 toff*2 Ciss VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω VDS = 5V, VGS = 0, f = 1MHz 9 Conditions I...