Datasheet Summary
Transistor
Silicon PNP epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9±0.1
2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q
1.5 R0.9 R0.9
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
- Symbol VCBO VCEO VEBO ICP IC PC- Tj Tstg
Ratings
- 30
- 20
- 7
- 8
- 5 1 150
- 55 ~ +150 1cm2
Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC- 71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and...