Datasheet Summary
Power Transistors
2SB0950 (2SB950), 2SB0950A (2SB950A)
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Silicon PNP epitaxial planar type darlington
Unit: mm
0.7±0.1
For power amplification and switching plementary to 2SD1276 and 2SD1276A
- Features
- High forward current transfer ratio hFE
- High-speed switching
- Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
10.0±0.2 5.5±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg
Rating
- 60
- 80
- 60
- 80
- 5
- 4
- 8 40 2 150
- 55 to +150
Unit V
Solder Dip (4.0)
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