Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
8.0+- 00..15
Unit: mm
3.2±0.2
- Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
- High collector-emitter voltage (Base open) VCEO
3.05±0.1
- High transition frequency fT
- TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
-...
