Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
For low-frequency power amplification
8.0+- 00..15
Unit: mm
3.2±0.2
- Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
- Excellent collector current IC characteristics of forward current
3.05±0.1 transfer ratio hFE
- High transition frequency fT
- TO-126B package which requires no insulation plate for installa- tion to the heat sink
1.9±0.1 16.0±1.0
/
-...
