Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
- Features
- High-speed switching
φ 3.2±0.1
15.0±0.5
- High collector-base voltage (Emitter open) VCBO
- Wide safe operation area
- Satisfactory linearity of forward current transfer ratio hFE
- Dielectric breakdown voltage of the package: > 5 kV
1.4±0.2 1.6±0.2
2.6±0.1
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