Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
7.5±0.2
Unit: mm
4.5±0.2 q q q
High collector to base voltage VCBO High collector to emitter VCEO Allowing automatic insertion with radial taping
10.8±0.2 s Features
3.8±0.2
90° 0.65±0.1 0.85±0.1
2.5±0.1
1.0±0.1 0.7±0.1 0.7±0.1
0.8C
0.8C s...