Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 s Features q q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
13.7- 0.2
+0.5
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7 6 3 1.2 30 2 150
- 55 to +150 Unit V V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1 s...