Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 s Features
9.9±0.3 φ3.2±0.1
2.9±0.2 q High collector to emitter VCEO q High-speed switching q Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw
4.1±0.2 8.0±0.2 Solder Dip
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