Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm s Features q q q q
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 2 150
- 55 to +150 Unit V V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2 s...