Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0±0.3 1.5±0.1
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1 s Features q q q q
1.5max.
1.1max.
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150
- 55 to +150 Unit V
10.5min.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5 1 2 3 s...
