Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
Unit: mm
3.4±0.3
6.0±0.2
1.0±0.1
- Features
3.0- +00..24 4.4±0.5
14.4±0.5
10.0±0.3 1.5±0.1
- High-speed switching
1.5- +00.4
- High collector-base voltage (Emitter open) VCBO
- Wide safe operation area
- Satisfactory linearity of forward current transfer ratio hFE
- N type package enabling direct soldering of the radiating fin to the
/ printed circuit board, etc. of small electronic equipment
4.4±0.5 2.0±0.5
0 to 0.4
0.8±0.1
2.54±0.3 1.4±0.1 5.08±0.5
R = 0.5 R = 0.5
1.0±0.1
0.4±0.1
(8.5) (6.0) 1.3
-...