Datasheet Summary
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Power Transistors
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 s Features q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 2 150
- 55 to +150 Unit V V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2 s...