Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type Darlington
For power amplification
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
7.5±0.2 s Features q q q
High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 400 5 10 6 40 2 150
- 55 to +150 Unit V V V A A W ˚C ˚C
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
Solder Dip s...
