Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm s Features q q q
15.0±0.5
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 80 6 5 3 20 2 150
- 55 to +150 Unit V V V A A W ˚C ˚C
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ3.2±0.1
13.7±0.2 4.2±0.2 s...
