Datasheet Summary
Silicon Junction FETs (Small Signal)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For pyroelectric sensor
0.65±0.15
+0.2 unit: mm
0.65±0.15
- 0.3
- 0.05
+0.25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9
- 0.05
1.9±0.2
+0.2
- 0.05
+0.1
+0.2 1.1
- 0.1
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings
- 40 10 2 200 150
- 55 to +150
Unit V mA mA mW °C °C
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