Datasheet Summary
Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.)
LN151F
ø4.6±0.15
Unit : mm
Glass window
12.7 min.
4.5±0.2
2-ø0.45±0.05 2.54±0.25
2 0. 0± 1. 1. 0± 0. 15
3˚ 45±
Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package
2 1
ø5.75 max.
1: Anode 2:...