Datasheet Summary
Infrared Light Emitting Diodes
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors
ø5.35 +0.2
- 0.1 ø4.2 +0.1
- 0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05
2-ø0.45±0.05
0 1.
5 .1 +0 0.1
- 1. 0
±0 .1
45± 3˚
High-speed...