Datasheet Summary
Infrared Light Emitting Diodes
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability
1. 0± 0. 15
2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1
ø4.2 +0.2
- 0.1
2-ø0.45±0.05
Wide directivity : θ = 100 deg. (typ.)
15 0. 0± 1.
45± 3˚
ø5.35 +0.2
-...