Datasheet Summary
Infrared Light Emitting Diodes
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
1.0 7.65±0.2
ø5.0±0.2
25.6±1.0 5.05±0.3 1.5 (2.0)
2-0.8 max. 2-0.6±0.15
2.54 0.6±0.15 1 2 1: Anode 2: Cathode
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
- Symbol PD IF IFP- VR Topr Tstg
Ratings 190 100 1 3
- 25 to +85
- 30 to +100
Unit mW mA A V ˚C ˚C tw = 10 µs, Duty...