Datasheet Summary
..
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
For high frequency rectification
1.25±0.10 0.60±0.10
Unit: mm
0.58+0.02
- 0.03
- Features
- IF(AV) = 1 A rectification is possible
- Low forward voltag VF
- High non-repetitive peak forward surge voltage
1.90±0.10
2.50±0.10
0.30±0.10
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current
- Junction temperature Storage time
Symbol VR VRM IF(AV) IFSM Tj Tstg
Rating 30 30 1.0 20 125
- 55 to +125
Unit V V
0.80±0.10 5°
0 to 0.1
A A °C °C
1: Anode 2: Cathode
SMini2-F2 Package
Marking Symbol: 3U
Note)
- : The peak-to-peak value...