Datasheet Summary
Intelligent Power Devices (IPDs)
Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm
0.5±0.1
1 2 3
1.2±0.25
7 6 5 6.3±0.2
9.4±0.3 s Applications q Switching power supply (to 7W) q AC adaptor q Battery charger
2.54±0.25
- 0.1
+0.25
3.8±0.25 4.0±0.3
7.62±0.25 s...