q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm
10.5±0.5 4.5±0.2
2.8±0.2 1.5±0.2
9.5±0.2 8.0±0.2
1.4±0.1
M Di ain sc te on na tin nc ue e/ d
6.8±0.1 15.4±0.3 4.2±0.3
s.
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Intelligent Power Devices (IPDs)
MIP0210SY
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
unit: mm
10.5±0.5 4.5±0.2
2.8±0.2 1.5±0.2
9.5±0.2 8.0±0.2
1.4±0.1
M Di ain sc te on na tin nc ue e/ d
6.8±0.1 15.4±0.3 4.2±0.3
s Applications
φ3.7±0.1
13.5±0.
MIP0210SY Datasheet
