q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm
0.5±0.1
1 2 3
8
1.2±0.25
7 6 5 6.3±0.2
9.4±0.3
s.
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Intelligent Power Devices (IPDs)
MIP0210SP
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
unit: mm
0.5±0.1
1 2 3
8
1.2±0.25
7 6 5 6.3±0.2
9.4±0.3
s Applications
q Switching power supply (to 7W) q AC adaptor q Battery charger
4
2.54±0.25
0.6 –0.1
+0.25
3.8±0.25 4.0±0.3
7.62±0.25
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter Drain voltage Control voltage Output current Control current Channel temperature Storage temperature Symbol VD VC ID IC Tch Tstg Ratings 700 8 1.25 0.1 150 −55 to +150 Unit V V A mA °C °C
3 to 15
1: Source 2: Source +0.1 3: Source .05 0.
MIP0210SP Datasheet
