PE42443 Datasheet | pSemi

Features - Low insertion loss: - 0.4 d B at 2.6 GHz typical - 0.49 d B at 3.8 GHz typical - High linearity IIP3: 85 d Bm - High power handling: 40 d Bm RMS, 50 d Bm peak - 105 °C operating temperature - Packaging - 20-lead 4 x 4 mm LGA Applications - Analog hybrid beamforming RF front end - 5G massive MIMO active antenna system (AAS) - 4G/4.5G TD-LTE macro/micro cell/RRH Figure 1 - PE42443 Functional Diagram RF1 RF4 RF2 CMOS Control Driver and ESD V1 V2 SEL RF3 Switch Configuration Product Description The PE42443 is a Ha RP™ technology-enhanced SP4T RF switch that supports a frequency range from 1.8 GHz to 5 GHz. It delivers extremely low insertion loss, high linearity and fast switching time with high input power handling capability making this device ideal for hybrid beamforming and in 5G massive MIMO (multi-input multioutput) applications. No blocking capacitors are required if DC voltage is not present on the RF ports. p Semi’s Ha RP™ technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the Ultra CMOS® process, offering the performance of Ga As with the economy and integration of conventional CMOS. The PE42443 is manufactured on p Semi’s Ultra CMOS process, a patented advanced form of silicon-oninsulator (SOI) technology. ©2021- 2023, p Semi Corporation. All rights reserved. - Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification .psemi. DOC-106518-6 - (06/2023) PE42443 Ultra CMOS SP4T RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this Ultra CMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD,...