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PE4259 - SPDT High Power UltraCMOS RF switch

Description

The PE4259 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 MHz through 3000 MHz.

Features

  •  Single-pin or complementary CMOS logic control inputs.
  •  Low insertion loss:.
  •  0.35 dB @ 1000 MHz.
  •  0.5 dB @ 2000 MHz.
  •  Isolation of 30 dB @ 1000 MHz.
  •  High ESD tolerance of 2 kV HBM.
  •  Typical input 1 dB compression point of +33.5 dBm.
  •  1.8V minimum power supply voltage.
  •  Ultra-small SC-70 package Figure 1. Functional Diagram RFC ESD RF1 ESD RF2 ESD CMOS Control Driver CTRL CTRL or VDD DOC-02109 Figure 2. Package Type SC-70 6‐lead SC‐70 Docume.

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Datasheet Details

Part number PE4259
Manufacturer Peregrine Semiconductor
File Size 561.09 KB
Description SPDT High Power UltraCMOS RF switch
Datasheet download datasheet PE4259 Datasheet
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Full PDF Text Transcription

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Product Description The PE4259 UltraCMOS® RF switch is designed to cover a broad range of applications from 10 MHz through 3000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3-volt power supply voltage, a typical input 1dB compression point of +33.5 dBm can be achieved. The PE4259 is manufactured on pSemi’s UltraCMOS process, a patented variation of siliconon-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Product Specification PE4259 SPDT High Power UltraCMOS® 10 MHz–3.
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