Perfect Intelligent PTW09N90
900V N-Channel MOSFET
| Part No. | PTW09N90 |
|---|---|
| Datasheet | PTW09N90 Download |
| Manufacturer |  Perfect Intelligent |
| Description | 900V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
Proprietary New Planar Technology RDS(ON),typ.=1.2 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTW09N90 BVDSS RDS(ON),typ. ID 900V 1.2Ω 9AAPPLICATIONS
Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package PTW09N90 TO-3P BrandABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID ℃ ID @ Tc =100 IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current ℃ Continuous Drain Current @ Tc=100 Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTW09N90 900 ±30 9.0 Figure 3 Figure 6 580 1000 240 2.0 300 260 Unit V A mJ V/ns W ℃ W/ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
