C30807 Description
This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm.
C30807 Key Features
- Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2
- Low Operating Voltage VR = 45V
- Anti-Reflection Coated to Enhance Responsivity at 900 nm
- Hermetically-Sealed Packages
- Spectral Response Range 400 to 1100 nm
- 100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation
- 5 mA/mm2 Peak value
- 20 mA/mm2 Forward Current, IF: Average value, continuous operation
- 10 max. mA Peak value
- 20 max. mA Ambient Temperature: Storage, Tstg
C30807 Applications
- Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2