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C30808 - (C30807 - C30831) N-Type Silicon PIN Photodetectors

Download the C30808 datasheet PDF. This datasheet also covers the C30810 variant, as both devices belong to the same (c30807 - c30831) n-type silicon pin photodetectors family and are provided as variant models within a single manufacturer datasheet.

General Description

This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm.

Key Features

  • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2.
  • Low Operating Voltage VR = 45V.
  • Anti-Reflection Coated to Enhance Responsivity at 900 nm.
  • Hermetically-Sealed Packages.
  • Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types) DC Reverse Operating Voltage VR.
  • .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation.
  • . . . . .5 mA/mm2 Peak valu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C30810_PerkinElmerOptoelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C30808
Manufacturer PerkinElmer Optoelectronics
File Size 140.55 KB
Description (C30807 - C30831) N-Type Silicon PIN Photodetectors
Datasheet download datasheet C30808 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm. These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications. Features • Broad Range of Photosensitive Surface Areas 0.