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C30902E - (C309xxx) Silicon Avalanche Photodiodes

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PerkinElmer Optoelectronics

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C30902E (C309xxx) Silicon Avalanche Photodiodes by PerkinElmer Optoelectronics - Datasheet Preview — Datasheet preview – C30902E

Datasheet Details

Part number	C30902E
Manufacturer	PerkinElmer Optoelectronics
File Size	232.32 KB
Description	(C309xxx) Silicon Avalanche Photodiodes
Datasheet	C30902E Datasheet
Additional preview pages of the C30902E datasheet.

Product details

Description

PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure.

Features

High Quantum Efficiency 77% Typical at 830 nm.
C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Probability - Typically 15,000/second at +22°C 350/second at -25°C Count Rates to 2 x 106/second.
Hermetically Sealed Package.
Low Noise at Room Temperature C30902E, C30921E - 2.3 x 10-13 A/Hz1/2 C30902S, C30921S - 1.1 x 10-13 A/Hz1/2.
High Responsivity - Internal Avalanche Gains in Excess o.

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Other Datasheets by PerkinElmer Optoelectronics

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Published: Jan 22, 2006 |