C30902E Description
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz.
C30902E Key Features
- High Quantum Efficiency 77% Typical at 830 nm
- C30902S and C30921S in Geiger Mode: Single-Photon Detection Probability to 50% Low Dark-Count Rate at 5% Detection Proba
- Hermetically Sealed Package
- Low Noise at Room Temperature C30902E, C30921E
- 2.3 x 10-13 A/Hz1/2 C30902S, C30921S
- 1.1 x 10-13 A/Hz1/2
- High Responsivity
- Internal Avalanche Gains in Excess of 150
- Spectral Response Range
- (10% Points) 400 to 1000 nm