C30902SH Datasheet PDF - PerkinElmer Optoelectronics Silicon Avalanche Photodiodes Specs

C30902SH - Silicon Avalanche Photodiodes

This page provides the datasheet information for the C30902SH, a member of the C30902 Silicon Avalanche Photodiodes family.

Datasheet Summary

Features

High quantum efficiency of 77% typical @ 830 nm.
C30902SH and C30921SH can be operated in “Geiger” mode.
Hermetically sealed package.
Low Noise at room temperature.
High responsivity.
internal avalanche gains in excess of 150.
Spectral response range.
(10% points) 400 to 1000 nm.
Time response.
typically 0.5 ns.
Wide operating temperature range - -40°C to +70°C.
RoHS-compliant.

Datasheet Details

Part number	C30902SH
Manufacturer	PerkinElmer Optoelectronics
File Size	175.76 KB
Description	Silicon Avalanche Photodiodes
Datasheet	C30902SH Datasheet
Additional preview pages of the C30902SH datasheet.

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Full PDF Text Transcription

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DATASHEET SENSOR SOLUTIONS Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm.

Published: Oct 10, 2015 |