VTB5051B
DESCRIPTION
Planar silicon photodiode in a “flat” window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is mon to the case. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D- CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response
- Peak Breakdown Voltage Angular Resp.
- 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 m V H = 0, V = 10 m V H = 0, V = 0 330 580 40 ±50 3.7 x 10 -14...
