VTB5051UVJ
DESCRIPTION
Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response.
CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR SR λrange λp VBR θ1/2 NEP D- CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Sensitivity Spectral Application Range Spectral Response
- Peak Breakdown Voltage Angular Resp.
- 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100...
