VTE1262 - GaAlAs Infrared Emitting Diodes

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PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE1262
Manufacturer	PerkinElmer Optoelectronics
File Size	40.52 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1262 Datasheet
Additional preview pages of the VTE1262 datasheet.

Product details

Description

CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.Coefficient of Po

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Other Datasheets by PerkinElmer Optoelectronics

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Published: Apr 17, 2005 |