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VTE1262 Datasheet Gaalas Infrared Emitting Diodes

Manufacturer: PerkinElmer Optoelectronics

Overview: GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1261, 1262 PACKAGE DIMENSIONS inch.

General Description

CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.

Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 3.0 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 µA 880 nm 35 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee mW/cm2 Min.

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