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VTE1281-2 - GaAlAs Infrared Emitting Diodes

General Description

This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip.

It is designed to be cost effective in moderate pulse drive applications.

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Datasheet Details

Part number VTE1281-2
Manufacturer PerkinElmer Optoelectronics
File Size 32.20 KB
Description GaAlAs Infrared Emitting Diodes
Datasheet download datasheet VTE1281-2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.5 A -.