VTE1285 - GaAlAs Infrared Emitting Diodes

Product Overview

PerkinElmer Optoelectronics

Datasheet Details

Part number	VTE1285
Manufacturer	PerkinElmer Optoelectronics
File Size	27.65 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1285 Datasheet
Additional preview pages of the VTE1285 datasheet.

Product details

Description

CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Curr

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Other Datasheets by PerkinElmer Optoelectronics

VTE1281-1 - GaAlAs Infrared Emitting Diodes
VTE1281-2 - GaAlAs Infrared Emitting Diodes
VTE1281F - GaAlAs Infrared Emitting Diodes
VTE1281W-1 - GaAlAs Infrared Emitting Diodes
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Published: Apr 17, 2005 |