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VTE1285 Datasheet Gaalas Infrared Emitting Diodes

Manufacturer: PerkinElmer Optoelectronics

Overview: GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Bullet Package — 880 nm VTE1285 PACKAGE DIMENSIONS inch.

General Description

CASE 62 T-1¾ (5 mm) BULLET CHIP SIZE: .015" x .015" This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.

The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.

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