VTE1291-1 - GaAlAs Infrared Emitting Diodes

Description

This narrow beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip.

This cost effective design is well suited for dc or high current pulse applications.

PerkinElmer Optoelectronics

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Datasheet Details

Part number	VTE1291-1
Manufacturer	PerkinElmer Optoelectronics
File Size	32.39 KB
Description	GaAlAs Infrared Emitting Diodes
Datasheet	VTE1291-1 Datasheet
Additional preview pages of the VTE1291-1 datasheet.

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GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1291-1, 1291-2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" This narrow beam angle 5 mm plastic packaged emitter contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarm applications (UL file #S3506). ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.5 A -.

Published: Apr 17, 2005 |